量子元件實驗室致力於運用傳統半導體(如矽、三五族化合物半導體及其異質結構)與新穎晶體材料(如石墨烯、二維過渡金屬硫化物、超導奈米結構等)為基材,進行功能性奈米電子與量子元件之設計與製程開發並運用此元件進行電荷與量子傳輸物理之研究以及次世代計算元件之應用。
Our group devotes to developing, designing, and fabricating functional nanoelectronic and quantum devices based on conventional semiconductors (including silicon and III-V compounds, and their heterostructures) and emergent crystalline materials (e.g., graphene, two-dimensional transition metal dichalcogenides such as MoS2 and PdSe2, superconducting nanostructures, etc) for the investigation of interesting charge and quantum transport physics and their fascinating next-generation computing applications.
27 June 2024
賀!本實驗室專題生翊誠榮獲”國科會113年度「大專學生研究計畫」”。
Congratulations! Yi-Cheng is awarded a scholarship from National Science and Technology Council (NSTC) Undergraduate Research Project.
27 February 2024
賀!本實驗室博士班學生珮慈榮獲”國科會113年度「博士生研究獎學金」”。
Congratulations! Pei-Tzu is awarded a scholarship from National Science and Technology Council (NSTC) Graduate Research Fellowship Pilot Program.
6 June 2023
賀!本實驗於環繞式與平面式金屬閘極矽基電晶體之量子啟發疊加與塌縮態讀取與控制之研究發表於國際指標性”先進材料”期刊。(LinkedIn)
Congratulations to all our partners! Our work on quantum-inspired current superposition and collapse in gate-all-around and planar-gated silicon nanostructured transistors has been published in Advanced Materials (https://doi.org/10.1002/adma.202301206)!!